Recent progress in high-efficiency IBC-SHJ devices development
Capitalizing on their recently-developed “tunnel-IBC” architecture [1], CSEM, EPFL and MBR recently demonstrated 23.9 % efficiency on such devices. This new achievement results from a thorough optimization of the nano-crystalline layers, which are the key enablers of the tunnel-IBC technology. The device performances are currently limited by the high contact resistance at the p-type contact, and higher efficiencies are expected after mitigation of these transport losses. These results were presented at the 33rd EUPVSEC conference in Amsterdam, September 2017 [2] and at the 8th workshop on back contact solar cells and modules technology, Freiburg, November 2017 [3].
Fig. 1: I-V curve of a 23.9 % efficient lab-scale tunnel-IBC device.
Fig. 2: Breakdown of the series resistance losses of the 23.9 % efficient tunnel-IBC device presented in Fig. 1.
References
[1] A. Tomasi, B. Paviet-Salomon, Q. Jeangros, J. Haschke, G. Christmann, L. Barraud, A. Descoeudres, J. P. Seif, S. Nicolay, M. Despeisse, S. De Wolf, and C. Ballif, “Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth,” Nature Energy, vol. 2, pp. 17062, 2017.
[2] B. Paviet-Salomon, A. Tomasi, D. Lachenal, N. Badel, G. Christmann, L. Barraud, A. Descœudres, J. Geissbühler, A. Faes, Q. Jeangros, J. P. Seif, P. Procel, O. Isabella, S. Nicolay, B. Strahm, S. De Wolf, M. Despeisse, and C. Ballif, “IBC-SHJ solar cells featuring an interband tunnel junction enabling simplified processing”, oral presentation, 33rd EUPVSEC, Amsterdam, The Netherlands, 2017.
[3] B. Paviet-Salomon, A. Tomasi, D. Lachenal, N. Badel, G. Christmann, L. Barraud, A. Descœudres, J. Geissbühler, A. Faes, Q. Jeangros, J. P. Seif, P. Procel, O. Isabella, S. Nicolay, B. Strahm, S. De Wolf, M. Despeisse, and C. Ballif, “IBC-SHJ solar cells featuring an interband tunnel junction enabling simplified processing”, oral presentation, 8th BC workshop, Freiburg, Germany, 2017.
